1 The latest results of the photoluminescence spectra of porous silicon by surface passivation and laser dye impregnated in porous silicon were presented in this paper.

2 The mechanism of the Photoluminescence and Electroluminescence has been discussed in briefly.

3 III - V semiconductor, isoelectronic trap, photoluminescence, Raman scattering, Time - resolved photoluminescence, ordered and disordered structure.

4 The safety of long afterglow photoluminescence materials is discussed in this paper.

5 By high optical efficiency photoluminescence and mapping, emission bands of point defects in different Ge-doped concentrations were analyzed.

6 The influences of surface passivation of photoluminescence and electroluminescence properties of porous silicon have been presented.

7 Moreover, at very low bias, a series of intrigue photoluminescence peaks appeared as a small quantity of excess electron wa.

8 Recently extensive interest has been focused upon the Main Group chalcogenidometalates due to their promising photoconductivity, photoluminescence and nonlinear optical properties.

9 The band edge excitonic transitions were measured by the reflectivity and photoluminescence measurements.

10 It'shows that the collection is superposition of Raman and photoluminescence spectrum.

11 A novel terbium complex, Tb ( acac ) 3 dad , was synthesized and the photoluminescence ( PL ) properties were studied.

12 The optical properties of AlN samples, involving absorption spectra, photoluminescence spectra and time - resolved spectra, were investigated.