1. A gate dielectric layer and a gate electrode are formed on the top surface, the opposing sidewalls of the fin and on the bottom and on the opposing sidewalls of the recess in the fin.

2. The gate electrode is formed on the gate insulating film and has a sidewall .

3. A gate electrode strip is over the first and the second active regions and forms a first MOS device and a second MOS device with the first active region and the second active region, respectively.

4. The common gate electrode may enclose a portion of one fin of the one pair of fins of the semiconductor substrate, and may be insulated from the semiconductor substrate.

5. A gate electrode may surround at least a portion of the fin of the semiconductor substrate. The gate electrode may be insulated from the semiconductor substrate.http://

6. By the side wall type gate electrode flash memory unit structure with the shared word line, the invention realizes the two-position storage, thereby improving the storage density.

7. A gate electrode is disposed in the gate trench over but insulated from the at least one conductive shield electrode.

8. The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.

9. Using the high-quality mica plate as substrate materials, a new gate electrode structure was fabricated successfully with silver slurry and simple screen-printing process.

10. A semiconductor device may include a semiconductor substrate, one common gate electrode, and one gate insulating layer.

11. The protection circuit on the input end has a gate electrode comprised of a band-like conductive film.

12. Following, forms dielectric layer on the base board, and the gate dielectric layer covers the gate electrode.

13. So the name of a process became identified with the width of the gate electrode.

14. The one gate insulating layer may be interposed between the common gate electrode and the one pair of fins of the semiconductor substrate.

15. In practical terms, this smallest feature was almost always the line that defined the gate electrode on the MOS transistor.